Type of presentation: Poster

MS-8-P-6006 Switching behavior of single Ag-TCNQ nanowires: an in situ Transmission Electron Microscopy study

Ran K.1, Rösner B.2, Butz B.1, Fink R.2, Spiecker E.1
1Center for Nanoanalysis and Electron Microscopy (CENEM), University of Erlangen-Nürnberg, Erlangen, Germany, 2Physical Chemistry II, University of Erlangen-Nürnberg, Erlangen, Germany
ke.ran@ww.uni-erlangen.de

Unique properties, such as high density of charge carriers and electric field-induced switching behavior are found in one-dimensional nanostructures of metal-tetracyanoquinodimethane (M-TCNQ).[1] For the case of Ag-TCNQ, reversible phase transition can be induced by electric field applied along the TCNQ ∏-∏ stacking direction, resulting in resistive switching with an on-off ratio reported to be as high as 104. A proposed mechanism suggests that, a partial neutral species of Ag and TCNQ form during the transition, provide additional conduction channels and increase the material conductivity substantially. Studies based on large-area Ag-TCNQ nanowires (NWs) provided useful information.[2] However, there is still lack of detailed studies from individual NWs, where the NW size and electric behavior can be correlated, and much more intrinsic qualities of a particular NW can be expected.
Using in situ Transmission Electron Microscopy (TEM), we are able to investigate the switching behaviors of individual Ag-TCNQ NWs. For the in situ study the NWs were grown directly on a Au TEM grid, as shown in Figure 1a. Figure 1b depicts one unit cell of the orthorhombic Ag-TCNQ phase II structure [3] along different axes. Typical TEM image and diffraction pattern from a single Ag-TCNQ NW are shown in Figure 1c and 1d. Generally, a NW growth direction along [100] is observed. In situ electric measurements were performed using an STM-TEM holder from Nanofactory Instruments AB in combination with the aberration-corrected Titan3 80-300 microscope at the University of Erlangen-Nürnberg. The W tip and the Au TEM grid serve as the two electrodes as schematically shown in the inset of Figure 2a.
In our study, for up to 30 individual NWs with different sizes, phase transition and resistive switching have been successfully induced. The typical I-V behavior of a single NW is shown in Figure 2a: starting from a state with low conductivity, and then switched on once the electric field reaching a certain point. The differentiation of current over bias, shown as inset in lower right of Figure 2a, as well suggests a sudden increase in the NW conductivity. Together with the large current passing through the NW after switched on, Joule heating becomes an issue which can easily lead to the NW breaking down. Figure 2b shows a NW switched on and surviving a current rang up to ~100 nA. However, it broke down at the center under the same bias sweep, but with current compliance increased to ~1 µA. This failure indicates that, heat dissipation should be taken into consideration for achieving high performance devices.

Reference
[1] Potember P. S. et al., Appl. Phys. Lett., 34, 1979, 405.
[2] Xiao K. et al., Adv. Funct. Mater., 18, 2008, 3043.
[3] Shields L. J. Chem. Soc. Faraday Trans. 2, 1985, 1.


The authors gratefully acknowledge financial support by the DFG through the Research Training Group GRK1896 and the Cluster of Excellence EXC 315.

Fig. 1: Figure 1. (a) TEM image of Ag-TCNQ NWs grown directly on a Au TEM grid. (b) A unit cell of Ag-TCNQ along a-axis (top) and c-axis (bottom). (c) TEM image of an individual AgTCNQ NW. (d) Diffraction pattern from the NW shown in (c), taken along [001] zone axis.

Fig. 2: Figure 2. (a) I-V behavior from a single NW, by sweeping the bias 10 V→-10 V→10 V. Current compliance of 1 µA was applied. Upper left inset shows the NW, and the electric measurement setup. Lower right inset is dI/dV from 0 V→-10 V. (b-c) Repeating the bias sweep 0 V→-10 V→ 0 V for a same NW with 100 nA and 1 µA current compliance respectively.